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2SK3869
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK3869
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.55 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 10 40 40 222 10 4 150 -55~150 A W mJ A mJ C C Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: Gate 2: Drain 3: Source
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.7 mH, IAR = 10 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3869
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 360 V, VGS = 10 V, ID = 10 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG =10 A, VGS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 450 2.0 2.5 Typ. 0.55 5.5 1050 10 110 25 60 40 130 28 16 12 Max 10 100 4.0 0.68 pF Unit A V A V V S

ns
RL = 40 VDD 200 V -

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1000 8.8 Max 10 40 -1.7 Unit A A V ns C
Marking
K3869
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3869
ID - VDS
10
COMMON SOURCE Tc = 25C PULSE TEST
ID - VDS
20 15 10
COMMON SOURCE Tc = 25C PULSE TEST
15
DRAIN CURRENT ID (A)
8
DRAIN CURRENT ID (A)
10 6 5.75 5.5
16
6.75 6.5 6.25 6
6
12
4 5.25 5 2 VGS=4.5V 0 0 2 4 6 8 10
8 5.5 4 VGS=4.5V 0 0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
20
VDS - VGS
10
16
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
COMMON SOURCE VDS = 20 V PULSE TEST
COMMON SOURCE Tc = 25C PULSE TEST
8
12
6
ID=10A
8 Tc=100 4 25 0 0 2 4 6 8 10 -55
4 5 2
2.5
0 0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
10
Yfs - ID
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
Tc=-55
RDS (ON) - ID
10
COMMON SOURCE Tc = 25C PULSE TEST
FORWARD TRANSFER ADMITTANCE Yfs (S)
100 1 25
1
COMMON SOURCE VDS = 20 V PULSE TEST
0.1 0.1 1 10 100
0.1 0.1 1 10 100
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
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RDS (ON) - Tc
3.0
IDR - VDS
100
2.5
2.0
DRAIN REVERSE CURRENT IDR (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE VGS = 10 V PULSE TEST
COMMON SOURCE Tc = 25C PULSE TEST
10
1.5 I D=10A 1.0 5 0.5 2.5
1 10 5 3 1 VGS=0-1V -0.8 -1.2 -1.6
0.0 -80 -40 0 40 80 120 160
0.1 0 -0.4
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE - VDS Vth (V)
5
Vth - Tc
COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST
(pF)
Ciss 1000
4
GATE THRESHOLD VOLTAGE
100
CAPACITANCE C
3
Coss 100
2
10
Crss
COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C
1
1 0.1 1 10
0 -80 -40 0 40 80 120 160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE
Tc (C)
PD - Tc
60
500
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
PD (W)
DRAIN-SOURCE VOLTAGE VDS (V)
400
VDS VDD=90V
16
DRAIN POWER DISSIPATION
40
300 180V 200 360V
12
8
20
100
0 0
40
80
120
160
0 0 8 16
COMMON SOURCE ID = 10 A Tc = 25C PULSE TEST
4
0 40
24
32
CASE TEMPERATURE
Tc
(C)
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
(V)
2SK3869
10
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 3.125C/W
0.01 0.01
0.001 10
100
1
10
100
1
10
PULSE WIDTH tw
(S)
100
SAFE OPERATING AREA
ID max (PULSED) * 100 s *
400
AVALANCHE ENERGY EAS (mJ)
EAS - Tch
DRAIN CURRENT ID (A)
ID max (CONTINUOUS)
10
1 ms *
300
200
1
DC OPERATION Tc = 25C
100
0
0.1
*: SINGLE NONPETITIVE PULSE Tc = 25C Curves must be derated linearly with increase in temperature.
25
50
75
100
125
Tch (C)
150
CHANNEL TEMPERATURE (INITIAL)
VDSS max
0.01 1 10 100 1000
DRAIN-SOURCE VOLTAGE VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
TEST CIRCUIT RG = 25 VDD = 90 V, L = 3.7 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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